Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-10-04
2005-10-04
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S711000, C438S694000, C438S696000, C438S710000, C438S709000, C257S192000, C257S194000, C118S719000, C118S72300R, C118S712000, C118S724000, C156S345420, C156S922000, C219S390000, C219S391000, C204S298340, C204S298370, C204S298380
Reexamination Certificate
active
06951821
ABSTRACT:
A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
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Hamelin Thomas
Laflamme, Jr. Arthur
Wallace Jay
Anya Igwe U.
Pillsbury Winthrop Shaw & Pittman LLP
Smith Matthew
Tokyo Electron Limited
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