Processing of etching refractory metals

Details Processing of etching refractory metals Processing of etching refractory metals

1988-12-01

1990-05-08

Nguyen, Nam X.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156664, 20419235, B44C 122

Patent

active

049235621

ABSTRACT:
A processing apparatus and method for anisotropically etching thin film metal (e.g. tungsten) under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF.sub.6) plus a bromine source (such as HBr), plus a very weak oxygen source (e.g. carbon monoxide). This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.

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L. McCarty et al., "Diffusion . . . with Tungsten . . . Pentafluoride", J. Electrochem. Soc., 10/74, pp. 1372-1376.
M. Burba et al., "Selective . . . Metallization", J. of Electrochem. Soc., 10/86, pp. 2113-2118.

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