Processing method of forming MRAM circuitry

Details Processing method of forming MRAM circuitry Processing method of forming MRAM circuitry

2006-06-27

2006-06-27

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S702000, C438S703000, C438S725000, C438S734000

Reexamination Certificate

active

07067429

ABSTRACT:
A method of forming integrated circuitry includes chemical vapor depositing a silicon carbide comprising layer over a substrate at a temperature of no greater than 500° C. Plasma etching is conducted through at least a portion of the silicon carbide comprising layer using a gas chemistry comprising oxygen and hydrogen. Semiconductor processing methods include the above in fabrication of contact openings and in fabrication of MRAM circuitry. Semiconductor processing methods also include fabrication of contact openings using resist and removing silicon carbide comprising material and resist in a common plasma etching step.

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