Processing method for semiconductor wafer

Details Processing method for semiconductor wafer Processing method for semiconductor wafer

2008-03-25

2008-03-25

Deo, Duy-Vu N. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S689000, C438S692000, C438S464000, C438S458000, C438S459000, C438S460000, C438S462000, C216S008000, C216S013000, C216S038000

Reexamination Certificate

active

07348275

ABSTRACT:
A processing method for a semiconductor wafer which is generally circular, and which has on the face thereof an annular surplus region present in an outer peripheral edge portion of the face, and a circular device region surrounded by the surplus region, the device region having many rectangular regions defined by streets arranged in a lattice pattern, each of the rectangular regions having a semiconductor device disposed therein. The processing method includes a back grinding step of grinding a region in the back of the wafer corresponding to the device region to form a circular concavity in the back of the wafer corresponding to the device region.

REFERENCES:
patent: 7115485 (2006-10-01), Priewasser
patent: 2003/0003688 (2003-01-01), Tandy et al.
patent: 1484792 (2004-08-01), None

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