Processing method for etching a substrate

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430330, 430396, G03F 700

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active

060251158

ABSTRACT:
A processing method for etching a substrate is described. This method includes subjecting a surface of a substrate to be processed to selective irradiation with a light in a gas atmosphere to form a surface-modified layer. The substrate surface with the surface-modified layer is then annealed to stabilize and make the surface-modified layer more etch resistant. Both the stabilized surface-modified layer and a non-modified portion of the substrate are then subjected to dry etching, thereby utilizing the higher resistance to dry etching of the stabilized surface-modified layer compared to the non-modified portion to selectively etch the non-modified portion to a desired depth.

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