Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1994-05-31
1999-10-05
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 430318, 430394, G03F 700
Patent
active
059621940
ABSTRACT:
A processing method comprises:
REFERENCES:
patent: 3326717 (1967-06-01), Gregor et al.
patent: 4324854 (1982-04-01), Beauchamp et al.
patent: 4612085 (1986-09-01), Jelks et al.
patent: 4619894 (1986-10-01), Bozler
patent: 4810601 (1989-03-01), Allen
patent: 4845529 (1989-07-01), Pearson
patent: 5344522 (1994-09-01), Yagi et al.
patent: 5413664 (1995-05-01), Yagi et al.
patent: 5503961 (1996-04-01), Linde
patent: 5545511 (1996-08-01), Hulderman
Sekine et al., Draft Collection of Lectures in the 5th Dry Processing Symposium, 97 (1983).
Electrochem. Soc., Draft Collections for 2d Symp. Jap. Branch, 75 (Jul. 7, 1989).
Research Reports XII on New Electronic Materials, Photoexcitation Processing Techniques Research Report 1, Jap. Electron. Indus. Symp. (Mar. 1986).
IBM Technical Disclosure Bulletin, Jun. 1984, US, vol. 27, No. 1b, pp. 686-688, XP002015431 "Registerable Multilayer Mask Fabrication Technique".
Patent Abstracts of Japan, vol. 10, No. 233 (E-4271), Aug. 13, 1986.
Patent Abstracts Of Japan, vol. 011, No. 110 (E-496), Apr. 7, 1987 & JP-A-61 258433 (Hitachi Ltd.), Nov. 15, 1986. JP-A-60 211074 (Fuji Denki Sougou Kenkyusho K.K.), Oct. 23, 1985.
Patent Abstracts Of Japan, vol. 10, No. 179 (E-414), Jun. 1986 & JP-A-61 029129 (Toshiba Corp), Feb. 1986. JP-A-59 161038 (Hitachi Seisakushi K.K.), Sep. 11, 1984.
Patent Abstracts Of Japan, vol. 15, No. 14 (E-1022), Jan. 1991 & JP-A-02 265240 (Matsushita Electron Corp.), Oct. 30, 1990. JP-A-56 164523 (Hitachi Seisakusho K.K.), Dec. 17, 1981.
Patent Abstracts Of Japan, vol. 7, No. 122 (C-168), May 26, 1983 & JP-A-58 039779 (Matsushita Denki Sangyo K.K.), Mar. 8, 1983.
Applied Physics Letters, vol. 52, No. 13, Mar. 28, 1988, pp. 1062-1064, XP000048017, G. Auvert, D. Tonneau and Y. Pauleau: "Evidence of a photon effect during the visible laser-assisted deposition of polycrystalline silicon from silane."
Patent Abstracts Of Japan, vol. 12, No. 436 (P-787), Nov. 17, 1988 & JP-A-63 165845 (Toshiba Corp.), Jul. 9, 1988.
Review Of Scientific Instruments, vol. 60, No. 7, Jul. 1989, pp. 2157-2159, XP000038319, Tsuneo Urisu, Hakaru Kyuragi, Yuichi Utsumi, Jun-Ichi Takahashi and Mamoru Kitamura: "Synchrotron radiation stimulated semiconductor processes: Chemical vapor deposition and etching."
Extended Abstracts Of The 20th (1988 International) Conference On Solid State Devices And Materials, 1988, pp. 573-576, XO000041548, Kazuya Masu, Jun Sakurai, Nobuyuki Shigeeda, Kazuo Tsubouchi, Nobuo Mikoshiba and Yosihisa Takeuto: "Aluminum Deposition from Weekly-Excited Metalorganic Source by Hybrid-Excitation CVD."
Extended Abstracts/Electrochemical Society, vol. 87, No. 2, Oct. 1987, p. 1588, XP000022259, T.R. Jervis and E.L. Joyce Jr.: "Low temperature deposition by laser induced breakdown in the vapor phase." JP-A-59 194440 (Mitsubishi Denki K.K.).
Sekine et al., Draft Collection of Lectures in the 5th Dry Processing Symposium, 97 (1983).
R.A. Levy et al., "Characterization of LPCVD Aluminum for VLSI Processing" I. Electrochem. Soc., 131, 2175 (1984).
Electrchem. Soc., Draft Collections for 2d Symp. Jap. Branch, 75 (Jul. 7, 1989).
Research Reports XII on New Electronic Materials, Photoexcitation Processing Techniques Research Report 1, Jap. Electron. Indus. Symp. (Mar.1986).
M. Taneya et al., "Photo-oxidation of GaAs for in situ patterned-mask formation prior to chlorine gas etching", Applied Physics Letters, vol. 56, No. 1, pp. 98-100 (Jan. 1, 1990).
Applied Physics Letters, vol. 56, No. 8, Feb. 19, 1990, pp.749-751, Y.L. Wang et al., "Role of Native Oxide Layers in the Patterning of InP by Ga Ion Beam writing and Ion Beam Assisted C12 Etching".
Journal Of Applied Physics, vol. 67, No. 9, May 1, 1990, pp. 4297-4303, M. Taneya et al., "Novel Electron-Beam Lithography for in Situ Patterning of GaAs Using an Oxidized Surface Thin Layer as a Resist".
Journal Of The Electrochemical Society, vol. 133, No. 10, Oct. 1986, pp. 2140-2147, A.H. Van Ommen et al., "Etch Rate Modification of Si3N4 Layers by Ion Bombardment and Annealing".
N.T.I.S. Tech Notes, Aug. 1988, pp. 640-641, XP000039686, Scandia National Laboratory, "Accelersted Ions Create Semiconductor Etching Masks".
Kawate Shin-Ichi
Komatsu Toshiyuki
Sato Yasue
Canon Kabushiki Kaisha
Duda Kathleen
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