Processing method

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant – Mechanically forming pattern into a resist

Reexamination Certificate

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C216S054000

Reexamination Certificate

active

07807065

ABSTRACT:
A processing method for forming a first pattern on a substrate to which a resist is applied includes the steps of pressing an original having a second pattern that has a relief reverse to that of the first pattern, against the resist on the substrate, and irradiating light onto the resist via the original, wherein a size of a concave of the second pattern is greater than a size of a convex of the first pattern corresponding to the concave of the second pattern, and a size of a convex of the second pattern is smaller than a size of a concave of the first pattern corresponding to the convex of the second pattern.

REFERENCES:
patent: 6078640 (2000-06-01), Hasegawa et al.
patent: 6087053 (2000-07-01), Hara
patent: 6258492 (2001-07-01), Miyachi
patent: 6334960 (2002-01-01), Willson et al.
patent: 2002/0094496 (2002-07-01), Choi et al.
patent: 2004/0008334 (2004-01-01), Sreenivasan et al.
patent: H10-312957 (1998-11-01), None
patent: H11-074190 (1999-03-01), None
patent: 2000-137319 (2000-05-01), None

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