Processing low dielectric constant materials for high speed elec

Etching a substrate: processes – Gas phase etching of substrate – Irradiating – ion implanting – alloying – diffusing – or...

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216 65, 264400, H01L 213105

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055543057

ABSTRACT:
A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.

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