Etching a substrate: processes – Gas phase etching of substrate – Irradiating – ion implanting – alloying – diffusing – or...
Patent
1995-03-27
1996-09-10
Breneman, R. Bruce
Etching a substrate: processes
Gas phase etching of substrate
Irradiating, ion implanting, alloying, diffusing, or...
216 65, 264400, H01L 213105
Patent
active
055543057
ABSTRACT:
A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.
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Cole Herbert S.
Daum Wolfgang
Sitnik-Nieters Theresa A.
Wojnarowski Robert J.
Agosti Ann M.
Alanko Anita
Breneman R. Bruce
General Electric Company
Snyder Marvin
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