Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation
Reexamination Certificate
2011-03-29
2011-03-29
Graybill, David E (Department: 2894)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Groove formation
C438S697000, C438S699000, C438S701000, C438S702000
Reexamination Certificate
active
07915064
ABSTRACT:
A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy.
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Cohen Guy A.
Cordes Steven A.
Goma Sherif A.
Rosner Joanna
Trewhella Jeannine M.
Graybill David E
International Business Machines - Corporation
Morris, Esq. Daniel P.
Scully , Scott, Murphy & Presser, P.C.
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