Processes for the chemical vapor deposition of copper and etchin

Details Processes for the chemical vapor deposition of copper and etchin Processes for the chemical vapor deposition of copper and etchin

1990-12-31

1992-03-24

Beck, Shrive

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156654, 156655, 156656, 156664, 427250, 427252, 427253, 4272554, C23C 1618, C23F 112

Patent

active

050985167

ABSTRACT:
A process is provided for selectively depositing copper films on metallic or other electrically conducting portions of substrate surfaces by contacting the substrate at a temperature from 110.degree. to 190.degree. C. with a volatile organometallic copper complex, in the gas phase, represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H or C.sub.1 -C.sub.8 perfluoroalkyl and L is carbon monoxide, an isonitrile, or an unsaturated hydrocarbon ligand containing at least one non-aromatic unsaturation.

REFERENCES:
patent: 3356527 (1967-12-01), Moshier et al.
patent: 3594216 (1971-07-01), Charles et al.
patent: 4321073 (1982-03-01), Blair
patent: 4425281 (1984-01-01), Doyle
patent: 4622095 (1986-11-01), Grobman et al.
patent: 4904340 (1990-02-01), Miracky et al.
patent: 4948623 (1990-08-01), Beach et al.
T. Ohba et al., "Tungsten and Other Advanced Metals for VLSI/ULSI Applications V"; Ed. by S. S. Wong, S. Furukawa; MRS, Pittsburgh, Pa.; p. 273; (1990).
T. Ohba et al.; Tech. Dig.; IEDM, p. 213 (1987).
R. L. Van Hemert et al.; J. Electrochem. Soc.; (112); 1123 (1965).
Reisman et al.; J. Electrochemical Soc.; vol. 136; No. 11; Nov. 1989.
A. E. Kaloyeros et al.; Journal of Electronic Materials; vol. 19; No. 3; 271; (1990).
C. Oehr et al.; Appl. Phy. A.; (45); 151-154; (1988).
F. A. Houle et al.; J. Val. Sci. Technol. A 4 2452-2458; (1986).
F. A. Houle et al.; Appl. Phys. Letter (46); 204-206 (1985).
G. S. Girolami et al.; Chem. Mater. (1); 8-10; (1989).
Beach et al.; Chem. Mater. (2); 216-219; (1990).

Affiliated with

Also associated with

Rating

Processes for the chemical vapor deposition of copper and etchin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Processes for the chemical vapor deposition of copper and etchin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Processes for the chemical vapor deposition of copper and etchin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2007330