Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-04-08
1994-02-15
Hearn, Brian E.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
148DIG100, 148DIG135, 437183, 437924, 437944, 437974, 437984, H01L 21306
Patent
active
052863352
ABSTRACT:
Novel processes permit integrating thin film semiconductor materials and devices using epitaxial lift off, alignment, and deposition onto a host substrate. One process involves the following steps. An epitaxial layer(s) is deposited on a sacrificial layer situated on a growth substrate. Device layers may be defined in the epitaxial layer. All exposed sides of the epitaxial layer is coated with a transparent carrier layer. The sacrificial layer is then etched away to release the combination of the epitaxial layer and the transparent carrier layer from the growth substrate. The epitaxial layer can then be aligned and selectively deposited onto a host substrate. Finally, the transparent carrier layer is removed, thereby leaving the epitaxial layer on the host substrate. An alternative process involves substantially the same methodology as the foregoing process except that the growth substrate is etched away before the sacrificial layer.
REFERENCES:
patent: 3959045 (1976-05-01), Antypas
patent: 4584039 (1986-04-01), Shea
patent: 4604160 (1986-08-01), Murakami et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 5171712 (1992-12-01), Wang et al.
E. Yablonovitch et al., "Double Heterostructure GaAs/AlGaAs Thin Film Diode Lasers . . . " IEEE Photonics Tech. Letts., vol. 1, No. 2, Feb. 1989, pp. 41-42.
I. Pollintier et al., "Fabrication of a GaAs-AlGaAs Grin-Sch Sqw Laser Diode", IEEE Photonics Tech. Letts., vol. 3, No. 2, Feb. 1991, pp. 115-117.
H. Choi et al., "Monolithic Integration of GaAs/AlGaAs LED and Si Driver Circuit", IEEE Electron Dev. Lett., vol. 9, pp. 512-514, 1988.
M. G. Allen, et al., "Microfabricated Structures for the In-Situ Measurement of Residual Stress, Young's Modulus, and Ultimate Strain of Thin Films", Applied Physics Letters, vol. 51, No. 4, pp. 241-244, 1987.
Allen Mark G.
Brooke Martin A.
Drabik Timothy J.
Jokerst Nan M.
Georgia Tech Research Corporation
Hearn Brian E.
Holtzman Laura M.
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