Processes for lift-off and deposition of thin film materials

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148DIG100, 148DIG135, 437183, 437924, 437944, 437974, 437984, H01L 21306

Patent

active

052863352

ABSTRACT:
Novel processes permit integrating thin film semiconductor materials and devices using epitaxial lift off, alignment, and deposition onto a host substrate. One process involves the following steps. An epitaxial layer(s) is deposited on a sacrificial layer situated on a growth substrate. Device layers may be defined in the epitaxial layer. All exposed sides of the epitaxial layer is coated with a transparent carrier layer. The sacrificial layer is then etched away to release the combination of the epitaxial layer and the transparent carrier layer from the growth substrate. The epitaxial layer can then be aligned and selectively deposited onto a host substrate. Finally, the transparent carrier layer is removed, thereby leaving the epitaxial layer on the host substrate. An alternative process involves substantially the same methodology as the foregoing process except that the growth substrate is etched away before the sacrificial layer.

REFERENCES:
patent: 3959045 (1976-05-01), Antypas
patent: 4584039 (1986-04-01), Shea
patent: 4604160 (1986-08-01), Murakami et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 5171712 (1992-12-01), Wang et al.
E. Yablonovitch et al., "Double Heterostructure GaAs/AlGaAs Thin Film Diode Lasers . . . " IEEE Photonics Tech. Letts., vol. 1, No. 2, Feb. 1989, pp. 41-42.
I. Pollintier et al., "Fabrication of a GaAs-AlGaAs Grin-Sch Sqw Laser Diode", IEEE Photonics Tech. Letts., vol. 3, No. 2, Feb. 1991, pp. 115-117.
H. Choi et al., "Monolithic Integration of GaAs/AlGaAs LED and Si Driver Circuit", IEEE Electron Dev. Lett., vol. 9, pp. 512-514, 1988.
M. G. Allen, et al., "Microfabricated Structures for the In-Situ Measurement of Residual Stress, Young's Modulus, and Ultimate Strain of Thin Films", Applied Physics Letters, vol. 51, No. 4, pp. 241-244, 1987.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Processes for lift-off and deposition of thin film materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Processes for lift-off and deposition of thin film materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Processes for lift-off and deposition of thin film materials will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1204005

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.