Processes for forming electronic devices including a...

Details Processes for forming electronic devices including a... Processes for forming electronic devices including a...

2007-05-15

2007-05-15

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S766000, C438S635000, C257SE21057

Reexamination Certificate

active

11058071

ABSTRACT:
An impurity can be introduced into a semiconductor layer of a workpiece to affect the oxidation and the relative concentration of one element with respect to another element within the semiconductor layer. The impurity can be selectively implanted using one or more masks, manipulating the beam line of an ion implant tool, moving a workpiece relative to the ion beam, or the like. The dose can vary as a function of distance from the center of the workpiece or vary locally based on the design of the electronic device or desires of the electronic device fabricator. In one embodiment, the impurity can be implanted in such a way as to result in a more uniform SiGe condensation across the substrate or across one or more portions of the substrate when the semiconductor layer includes a SiGe layer.

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A.F. Vyatkin, et al., “Ion Beam Induced Strain Relaxation in Pseudomorphous Epitaxial SiGe Layers.” 2000 IEEE, Russian Foundation for Basic Research, Project No. 00-02-18039, pp. 70-72.
T. Tezuka, et al., “Fabrication of Strained Si on an Ultrathin SiGe-on-Insulator Virtual Substrate with a High-Ge Fraction,” 2001 American Institute of Physics, Advanced LSI Technology Laboratory, Kawasaki, Japan, pp. 1798-1798-1800, Sep. 17, 2001.

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