Processes for cleaning and stripping photoresist from surfaces o

Details Processes for cleaning and stripping photoresist from surfaces o Processes for cleaning and stripping photoresist from surfaces o

1996-04-26

1999-03-16

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419232, 216 18, 216 39, 216 41, 216 67, 216 69, 438694, 438700, 438703, 438706, 438710, 438725, 438726, 438727, C23C 1434, C23F 100, H01L 213065

Patent

active

058824898

ABSTRACT:
A method for removing a resist layer, particularly in via holes, includes plasma to remove organic compounds, rinsing the device in deionized water, and sputtering with argon to remove inorganic compounds. The order of rinsing and sputtering can be reversed. These methods avoid the use of acids and industrial solvents.

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Krongelb, "Control of Edge Build-up in Sputter Etching and Ion Milling", IBM Tech. Discl. Bulletin, vol. 21, No. 3, p. 1253-1255.
Jimbo et al., Japanese Journal of Applied Physics, vol. 32, No. 6b, Jun. 1993, Tokyo, pp. 3045-3050 "Resist Sidewall Film Removal after,Al Reactive Ion Etching (RIE) Employing F + H2O Downstream Ashing", Sec. 3.4.
Japanese Journal of Applied Physics, vol. 32, No. 6b, Jun. 1993, Tokyo, pp. 3045-3050, Jimbo et al. "Resist Sidewall Film Removal after A1 Reactive Ion Etching (RIE) Employing F +H.sub.2 ODownstream ashing," Sec. 3.4.
Journal of the Electrochemical Society, vol. 137, No. 8, Aug. 1990, Manchester,, New Hampshire, pp. 2534-2538, XP000151176, Mayumi et al., "Post-Treatments for Reactive Ion Etching of A1-Si-Cu alloys".
Journal of the Electrochemical Society, vol. 141, No. 1, Jan. 1994, Manchester, New Hampshire, pp. 192-205, XP000445646, Hirose et al., "Ion-Implanted Photoresist and Damage-Free Stripping".

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