Processes and gas mixtures for the reactive ion etching of alumi

Details Processes and gas mixtures for the reactive ion etching of alumi Processes and gas mixtures for the reactive ion etching of alumi

1983-03-03

1984-04-24

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156626, 156646, 156656, 1566591, 156665, 204192E, 252 791, C23F 102, B44B 122, C03C 1500, C03C 2506

Patent

active

044446187

ABSTRACT:
A method and gas mixture of boron trichloride, carbon tetrachloride and oxygen useful for the reactive ion etching of aluminum and aluminum alloys to form metallizations for microelectronic devices and circuits is provided. The method and gas mixture provide consistent induction periods, high etch rates, high selectivity between photoresist and silicon dioxide, and minimal loading effects with good dimensional control. Also provided is a two step, two gas mixture process particularly useful in preventing linewidth loss due to excessive resist erosion during long overetches wherein the boron trichloride, carbon tetrachloride and oxygen gas mixture is used for etching and subsequently a boron trichloride-oxygen gas mixture is used for the overetch.

REFERENCES:
patent: 4267013 (1981-05-01), Iida et al.
patent: 4350563 (1982-09-01), Takada et al.
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4380488 (1983-04-01), Reichelderfer et al.

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