Process variation monitor for integrated circuits

Details Process variation monitor for integrated circuits Process variation monitor for integrated circuits

1997-07-28

1999-05-11

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

438 18, H01L23/58

Patent

active

059030127

ABSTRACT:
A process variation monitor sensing transistor parameters and supplying a compensation signal. The process variation monitor, monitors fabrication variations by utilizing a first and second transistor. The first transistor can be an un-implanted or a partially implanted transistor. The second transistor can be a conventional, fully implanted transistor or a partially implanted transistor. The second transistor having parameters which reflect process variations. The second transistor has a predetermined length, width, and implanting relationship to the first transistor. The transistors are biased which creates a signal in the first transistor that varies proportional to the parameters of the second transistor. Process induced parameters such as threshold voltage, effective length, transconductance, and mobility of the second transistor can be monitored by the first transistor, such that the signal produced by the first transistor can be used to compensate sensitive circuits for process variations.

REFERENCES:
patent: 5286656 (1994-02-01), Keown et al.
patent: 5703381 (1997-12-01), Iwasa et al.

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