Process utilizing selective TED effect when forming devices with

Details Process utilizing selective TED effect when forming devices with Process utilizing selective TED effect when forming devices with

1998-02-12

2000-10-24

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438528, H01L 2122

Patent

active

061366730

ABSTRACT:
A process for device fabrication in which transient enhanced diffusion (TED) is used to obtain a desired distribution of dopants in a crystalline substrate is disclosed. In the process, at least two dopants and a non-dopant are introduced into the same region of a substrate. The diffusion of the dopants in the substrate during a subsequent thermal anneal is affected by the non-dopant. The amount of non-dopant introduced into the substrate is selected to obtain, in conjunction with the subsequent thermal anneal, the desired distribution of dopants in the substrate. The concentration of the non-dopant is in the range of about 6.times.10.sup.16 atoms/cm.sup.3 to about 3.times.10.sup.21 atoms/cm.sup.3. The substrate is then annealed at a temperature in the range of about 700.degree. C. to about 950.degree. C. to obtain the desired dopant profile.

REFERENCES:
patent: 3718502 (1973-02-01), Gibbons
patent: 4133701 (1979-01-01), Greenstein et al.
patent: 4456489 (1984-06-01), Wu
patent: 5145794 (1992-09-01), Kase et al.
patent: 5286660 (1994-02-01), Chiou et al.
patent: 5585286 (1996-12-01), Aronowitz et al.
patent: 5825066 (1998-10-01), Buynoski
patent: 5899732 (1999-05-01), Gardner et al.
patent: 6037640 (2000-03-01), Lee
patent: 6043139 (2000-03-01), Eaglesham et al.
patent: 6063682 (2000-05-01), Sultan et al.
Ebbing D., General Chemistry, 3rd Edition, Figure 10.31, p. 388, 1990.
"Three-Dimensional Characterization of Bipolar Transistors in a Submicron BIMOS Technology Using Integrated Process and Device Simulation", by Pinto, M. R. et al., IEEE, 0-7803-0817-4/92, pp. 923-926 (1992).
"Very-High-Speed Silicon Bipolar Transistors with In-Situ Doped Polysilicon Emitter and Rapid Vapor-Phase Doping Base", by Uchino, T. et al., IEEE Transactions on Electron Devices, vol. 42, No. 3 pp. 406-412 (Mar. 1995).
"Implanting Damage and the Anomalous Transient Diffusion of Ion-Implanted Boron", by Michel, A. E. et al., Appl. Phys. Lett., vol. 51, No. 7, pp. 487-489 (Aug. 1997).
"Transient Phosphorus Diffusion Below the Amorphization Threshold", by Giles, M. D. et al., J. Electrochem. Soc., vol. 138, No. 4, pp. 1160-1165 (Apr. 1991).
"Ion Implantation and Transient Enhanced Diffusion", by Poate, J. M. et al., IEEE, 7803-2700-4, pp. 77-80 (1995).
C. M. Osburn et al., "Ultra-Shallow Junction Formation Using Very Low Energy B and BF2 Sources", Proceedings of the 11th International Conference on Ion Implantation Technology, Jun. 1996, pp. 607-610.
R. Angelucci et al., "Temperature and Time Dependence of Dopant Enhanced Diffusion in Self-Ion Implanted Silicon", J. Electrochem. Soc., 1987, vol. 134, p. 3130-3134.
R. B. Fair, "Shallow Junctions--Modeling the Dominance of Point Defect Charge States During Transient Diffusion", Technical Digest., International Electron Devices Meeting, 1989, pp. 691-694.

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