Process utilizing relationship between reflectivity and resist t

Details Process utilizing relationship between reflectivity and resist t Process utilizing relationship between reflectivity and resist t

1998-03-19

1999-06-29

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

G03F 900

Patent

active

059167173

ABSTRACT:
A method of forming and exposing a layer of resist which will minimize or eliminate side lobe effect resulting from the use of phase shifting masks or attenuating phase shifting masks in the exposed and developed layer of resist. The curve of reflectivity as a function of resist thickness, or swing curve, is calculated using the index of refraction, n, and the extinction coefficient, k, of the resist material and plotted. An optimum thickness of the resist corresponding to a relative maximum of the swing curve is chosen. The angular velocity used to spin the resist onto wafers is selected to produce the optimum thickness. Wafers having a resist layer with the optimum thickness are then prepared, exposed, and developed. The layer of resist may have a layer of anti-reflective material on the top surface of the layer of resist if desired.

REFERENCES:
patent: 4977330 (1990-12-01), Batchelder et al.
patent: 5354632 (1994-10-01), Dao et al.
patent: 5556726 (1996-09-01), Yuan
patent: 5633713 (1997-05-01), Tanaka et al.

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