Process using plasma for forming conductive through-holes throug

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29853, 156644, 156645, 156646, 156656, 156666, 156668, 156902, 204192E, B44C 122, B29C 1708, C03C 1500, C23F 102

Patent

active

044722389

ABSTRACT:
A conductive through-hole is formed by plasma etching a hole completely through a dielectric sandwiched between conductors and by deforming at least one conductor which has been undercut during the etching.

REFERENCES:
patent: 3557446 (1971-01-01), Charschan
patent: 3969815 (1976-07-01), Hacke et al.
patent: 4184909 (1980-01-01), Chang et al.
patent: 4240869 (1980-12-01), Diepers
patent: 4277321 (1981-07-01), Bartlett et al.
patent: 4289573 (1981-09-01), Economy et al.
patent: 4319708 (1982-03-01), Lomerson
J. W. Coburn, "Plasma Etching", pp. 1-7.
CPI Prior Art Search Report, J. P. Daniszewski, pp. 2-8.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process using plasma for forming conductive through-holes throug does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process using plasma for forming conductive through-holes throug, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process using plasma for forming conductive through-holes throug will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-792598

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.