Process using dry etchant to avoid mask-and-etch cycle

Details Process using dry etchant to avoid mask-and-etch cycle Process using dry etchant to avoid mask-and-etch cycle

1985-08-09

1986-11-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156653, 156657, 1566591, 20419232, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

046247394

ABSTRACT:
A process is disclosed for simultaneously etching holes in both the thick and thin portions of a dielectric layer on a semiconductor substrate. An anisotropic dry etchant is used to eliminate any significant lateral etching of the dielectric layer during etching. Thus, a mask-and-etch cycle may be eliminated from processing during integrated circuit manufacture, yet dimensional tolerances are maintained.

REFERENCES:
patent: 4180432 (1979-12-01), Clark
patent: 4253907 (1981-03-01), Parry et al.
patent: 4457820 (1984-07-01), Bergeron et al.
patent: 4473436 (1984-09-01), Beinvogl
patent: 4479850 (1984-10-01), Beinvogl et al.
patent: 4508815 (1985-04-01), Ackmann et al.
patent: 4532002 (1985-07-01), White
Chang et al, Hydrogen Plasma Etching of Semiconductors and their Oxides, J. Vac. Sci. Technol., 3/82, pp. 490-491; 1/82, pp. 45-52.

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