Process to reduce substrate effects by forming channels...

Details Process to reduce substrate effects by forming channels... Process to reduce substrate effects by forming channels...

2005-03-22

2005-03-22

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S712000, C438S719000, C438S723000, C438S724000, C438S756000, C438S757000

Reexamination Certificate

active

06869884

ABSTRACT:
A first method of reducing semiconductor device substrate effects comprising the following steps. O+or O2+are selectively implanted into a silicon substrate to form a silicon-damaged silicon oxide region. One or more devices are formed over the silicon substrate proximate the silicon-damaged silicon oxide region within at least one upper dielectric layer. A passivation layer is formed over the at least one upper dielectric layer. The passivation layer and the at least one upper dielectric layer are patterned to form a trench exposing a portion of the silicon substrate over the silicon-damaged silicon oxide region. The silicon-damaged silicon oxide region is selectively etched to form a channel continuous and contiguous with the trench whereby the channel reduces the substrate effects of the one or more semiconductor devices. A second method of reducing substrate effects under analog devices includes forming an analog device on a SOI substrate and then selectively etching the silicon oxide layer of the SOI substrate to form a channel at least partially underlying the analog device.

REFERENCES:
patent: 5539241 (1996-07-01), Abidi et al.
patent: 5600174 (1997-02-01), Reay et al.
patent: 5972776 (1999-10-01), Bryant
patent: 5976945 (1999-11-01), Chi et al.
patent: 6057202 (2000-05-01), Chen et al.
patent: 6180995 (2001-01-01), Hebert
patent: 6218319 (2001-04-01), Dutron et al.
patent: 6275122 (2001-08-01), Speidell et al.
patent: 6287931 (2001-09-01), Chen
patent: 6313008 (2001-11-01), Leung et al.
patent: 6326314 (2001-12-01), Merrill et al.
patent: 6441435 (2002-08-01), Chan
patent: 6465852 (2002-10-01), Ju
patent: 6627505 (2003-09-01), Adan

Affiliated with

Also associated with

Rating

Process to reduce substrate effects by forming channels... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process to reduce substrate effects by forming channels..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process to reduce substrate effects by forming channels... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3397349