Process to obtain thin film lines

Details Process to obtain thin film lines Process to obtain thin film lines

1987-09-25

1989-03-14

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430316, 430317, 430318, 156643, 156646, 156652, G03C 516

Patent

active

048123889

ABSTRACT:
It is described a process to obtain thin film lines by photolithography of thick resist and subsequent selective galvanic growth of gold which enables to obtain very thin lines (2-10 micron) with high definition, that is with nearly vertical walls and with a tolerance in the width of about 1 micron. Such results have been achieved by using polyimide as thick resist, by particular cure cycles of the same polyimide and by a particular dry etching of the polyimide layer to obtain seats in which afterwards the lines become grown.

REFERENCES:
patent: 4057659 (1977-11-01), Pammer et al.
patent: 4451971 (1984-06-01), Milgram
patent: 4502916 (1985-05-01), Umezaki et al.
patent: 4523976 (1985-06-01), Bukhman
patent: 4606998 (1986-08-01), Clodgo et al.
Cox et al., Minimal Metal Mask for RIE Polyimide, IBM Tech. Discl. Bull., vol. 23(2), Jul. 1980, p. 830.

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