Process to minimize a seam in tungsten filled contact holes

Details Process to minimize a seam in tungsten filled contact holes Process to minimize a seam in tungsten filled contact holes

1996-03-15

1997-04-22

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438644, 438636, 438629, 438668, H01L 21441

Patent

active

056228945

ABSTRACT:
A process has been developed in which high aspect ratio contact holes, are filled with chemically vapor deposited tungsten plugs, exhibiting little or no seam at the center of the tungsten plug. The process features protection of the tungsten plug from the final removal and overetch steps, needed to remove residual tungsten from areas outside the contact hole. This is accomplished by delaying the residual removal procedure, until the tungsten plug is protected by an overlying interconnect metallization structure.

REFERENCES:
patent: 5124780 (1992-06-01), Sandhu et al.
patent: 5312775 (1994-05-01), Fujii et al.
patent: 5332691 (1994-07-01), Kinoshita et al.
patent: 5387550 (1995-02-01), Cheffings et al.
patent: 5395795 (1995-03-01), Hong et al.
patent: 5407861 (1995-04-01), Marangon et al.
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 5422310 (1995-06-01), Ito

Affiliated with

Also associated with

Rating

Process to minimize a seam in tungsten filled contact holes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process to minimize a seam in tungsten filled contact holes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process to minimize a seam in tungsten filled contact holes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-341294