Process to improve adhesion of cap layers in integrated circuits

Details Process to improve adhesion of cap layers in integrated circuits Process to improve adhesion of cap layers in integrated circuits

1998-07-22

1999-12-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438623, 438624, 438763, 438784, H01R 911

Patent

active

060017473

ABSTRACT:
A method for making a multi-layered integrated circuit structure, includes depositing a methyl doped silicon oxide layer over a substrate. SiO.sub.2 skin is deposited on the methyl doped silicon oxide layer by decreasing the flow of CH.sub.3 SiH.sub.3, increasing the flow of SiH.sub.4 and keeping the flow of H.sub.2 O.sub.2 constant for a period of time. Finally, a cap layer is deposited which adheres to the SiO.sub.2 skin.

REFERENCES:
patent: 5716890 (1996-10-01), Yao
patent: 5872065 (1997-04-01), Sivaramakrishnan
patent: 5879574 (1996-11-01), Sivaramakrishnan et al.

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