Process to apply a MoS.sub.2 coating on a substrate

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419216, C23C 1434

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active

050375164

ABSTRACT:
In a process for application of a MoS.sub.2 coating on a substrate in which, within a sputter chamber, molybdenum disulfide is released in a gas discharge from a molybdenum disulfide target and deposited onto the substrate, in order to produce a lamella structure extending parallel to the surface of the substrate, it is proposed that the water vapor partial pressure in the sputter chamber is reduced to such an extent that the ratio of the water vapor partial pressure to the coating rate of the substrate falls below a prescribed value.

REFERENCES:
patent: 4324803 (1982-04-01), Bergmann et al.
patent: 4415419 (1983-11-01), Niederhaeuser et al.
Andersson et al., "3.5 Morphologies . . . lubricants", Vacuum, vol. 27, No. 4, 1977, pp. 379-382.
R. Christy, "Sputtered MoS.sub.2. . . Improvements", Thin Solid Films, 73 (1980), pp. 299-307.
B. Stupp, "Synergistic . . . MoS.sub.2 ", Thin Solid Films, 84 (1981), pp. 257-266.
ASLE Proceedings--Denver, Colorado, Aug. 7-10, 1984, pp. 201-207 and pp. 223-229.
Morphological Properties of Sputtered MoS.sub.2 Films WEAR 91 (1983), pp. 281-288.

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