Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1987-09-18
1991-08-06
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419216, C23C 1434
Patent
active
050375164
ABSTRACT:
In a process for application of a MoS.sub.2 coating on a substrate in which, within a sputter chamber, molybdenum disulfide is released in a gas discharge from a molybdenum disulfide target and deposited onto the substrate, in order to produce a lamella structure extending parallel to the surface of the substrate, it is proposed that the water vapor partial pressure in the sputter chamber is reduced to such an extent that the ratio of the water vapor partial pressure to the coating rate of the substrate falls below a prescribed value.
REFERENCES:
patent: 4324803 (1982-04-01), Bergmann et al.
patent: 4415419 (1983-11-01), Niederhaeuser et al.
Andersson et al., "3.5 Morphologies . . . lubricants", Vacuum, vol. 27, No. 4, 1977, pp. 379-382.
R. Christy, "Sputtered MoS.sub.2. . . Improvements", Thin Solid Films, 73 (1980), pp. 299-307.
B. Stupp, "Synergistic . . . MoS.sub.2 ", Thin Solid Films, 84 (1981), pp. 257-266.
ASLE Proceedings--Denver, Colorado, Aug. 7-10, 1984, pp. 201-207 and pp. 223-229.
Morphological Properties of Sputtered MoS.sub.2 Films WEAR 91 (1983), pp. 281-288.
Deutsche Forschungsanstalt fur Luft - und Raumfahrt e.V.
Nguyen Nam X.
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