Process of vacuum annealing a thin film metallization on high pu

Details Process of vacuum annealing a thin film metallization on high pu Process of vacuum annealing a thin film metallization on high pu

1995-04-12

1999-01-05

Graybill, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438648, 438650, 438656, 438660, H01L 21283, H01L 21324

Patent

active

058562354

ABSTRACT:
A thin-film microcircuit comprising fabricating a substrate of high-purity, densely packed alumina ceramic with a fine grain size, and metallization deposited thereon and applying a vacuum anneal to the metallization.

REFERENCES:
patent: 3400210 (1968-09-01), Reimer
patent: 3436604 (1969-04-01), Hyltin et al.
patent: 3577631 (1971-05-01), Bylander et al.
patent: 3829356 (1974-08-01), Rutt
patent: 4052738 (1977-10-01), Hosomi et al.
patent: 4304624 (1981-12-01), Carson et al.
patent: 4319264 (1982-03-01), Gangulee et al.
patent: 4320438 (1982-03-01), Ibrahim et al.
patent: 4352715 (1982-10-01), Carson et al.
patent: 4354107 (1982-10-01), Carson et al.
patent: 4361717 (1982-11-01), Gilmore et al.
patent: 4371744 (1983-02-01), Badet et al.
patent: 4403238 (1983-09-01), Clark
patent: 4423468 (1983-12-01), Gatto et al.
patent: 4525921 (1985-07-01), Carson et al.
patent: 4551629 (1985-11-01), Carson et al.
patent: 4569722 (1986-02-01), Maury et al.
patent: 4581279 (1986-04-01), Sugishita et al.
patent: 4659931 (1987-04-01), Schmitz et al.
patent: 4663191 (1987-05-01), Choi et al.
patent: 4670770 (1987-06-01), Tai
patent: 4672152 (1987-06-01), Shinohara et al.
patent: 4712161 (1987-12-01), Pryor et al.
patent: 4739443 (1988-04-01), Singhdeo
patent: 4749660 (1988-06-01), Short et al.
patent: 4794092 (1988-12-01), Solomon
patent: 4797715 (1989-01-01), Thillays et al.
patent: 4814945 (1989-03-01), Leibowitz
patent: 4851615 (1989-07-01), Butt
patent: 4931906 (1990-06-01), Reifel et al.
patent: 4952446 (1990-08-01), Lee et al.
patent: 4991283 (1991-02-01), Johnson et al.
patent: 5006421 (1991-04-01), Yang et al.
patent: 5028274 (1991-07-01), Basol et al.
patent: 5128749 (1992-07-01), Hornback et al.
patent: 5132248 (1992-07-01), Drummond et al.
patent: 5135556 (1992-08-01), Hornback et al.
patent: 5190792 (1993-03-01), Blum et al.
patent: 5240877 (1993-08-01), Yoshida et al.
patent: 5290588 (1994-03-01), Romero et al.
patent: 5300307 (1994-04-01), Frear et al.
patent: 5342793 (1994-08-01), Santangelo et al.
patent: 5471084 (1995-11-01), Suzuki et al.
Microelectronics Packaging Handbook, New York, Van Nostrand Reinhold. p. 1144, 1988.
"Asahi Chemical to Mass produce sintered alumina substrates."; Japan Chemical Week, vol. 27 (issue 1359) p. 15. Author not available, Apr. 1986 .

Affiliated with

Also associated with

Rating

Process of vacuum annealing a thin film metallization on high pu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of vacuum annealing a thin film metallization on high pu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of vacuum annealing a thin film metallization on high pu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-861953