Process of pulling a crystal

Details Process of pulling a crystal Process of pulling a crystal

1988-07-07

1990-07-31

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566204, 1566203, 1566022, 1566141, 1566171, C30B 1524

Patent

active

049448340

ABSTRACT:
In a process for pulling a crystal such as Si, Ge, GaAs, InP, GaP, InAs, AlAs, CdTe, CdSe, ZnTe, HgTe, MnTe, Gd.sub.3 Ga.sub.5 O.sub.12, Bi.sub.12 SiO.sub.20 and LiNbO.sub.3 from a raw material melt within a baffle plate whose bore diameter is gradually increased upward and which is arranged in such a manner that the melt inside and outside the baffle plate is in communication with each other through the small opening part at the end thereof, the baffle plate is moved relatively to the surface of the melt so as to increase the diameter of the melt surface inside the baffle plate with the increase of the diameter of the pulled crystal at the solid-liquid interface.

REFERENCES:
patent: 2876147 (1959-03-01), Kniepkamp et al.
patent: 3002824 (1961-10-01), Francois
patent: 4167554 (1979-09-01), Fisher
patent: 4469552 (1984-09-01), Thornhill
patent: 4609425 (1986-09-01), Mateika et al.
Mateika et al., Journal of Crystal Growth, 65 (1983) 237-242.
Whiffin et al., Journal of Crystal Growth, 10 (1971) 91-96.

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