Process of producing silicon ribbon with p-n junction

Details Process of producing silicon ribbon with p-n junction Process of producing silicon ribbon with p-n junction

1984-09-13

1985-06-18

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 148 15, 148172, 148187, 148188, 148189, 264177F, 264212, 427 85, 427 86, 428620, 428939, H01L 21208

Patent

active

045239665

ABSTRACT:
The disclosed process produces a silicon ribbon wafer with a p-n junction, by melting a raw silicon material, ejecting the molten silicon material onto a rotary cooling member so as to produce a silicon ribbon wafer through super-rapid cooling, and applying an impurity element whose polarity is opposite to that of the raw silicon material onto the thus formed silicon ribbon wafer at a temperature of not lower than 600.degree. C. and cooled from said temperature, whereby a p-n junction is formed in the silicon ribbon wafer simultaneously with the production of the fully solidified silicon ribbon wafer.

REFERENCES:
patent: 4152535 (1979-05-01), Deminet et al.
patent: 4229231 (1980-10-01), Witt et al.
patent: 4320251 (1982-03-01), Narasimhan et al.
patent: 4339255 (1982-07-01), Ovshinsky et al.
patent: 4363769 (1982-12-01), Tsuya et al.
CRC Handbook of Chemistry and Physics, 60th edn., 1979-1980, CRC Press, Inc., Boca Raton, FL, p. B-21.
Carlson, D. E., "Amorphous Silicon Solar Cells", IEEE Trans. on Electron Devices, vol. ED-24, No. 4, Apr. 1977.

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