Semiconductor laser

Details Semiconductor laser Semiconductor laser

1991-06-21

1992-12-22

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, H01S 319

Patent

active

051739135

ABSTRACT:
A semiconductor laser having a double heterojunction structure includes a first semiconductor cladding layer having a stripe-shaped groove, a semiconductor active layer disposed on the cladding layer and having an energy band gap narrower than that of the cladding layer, and a second semiconductor cladding layer disposed on the active layer and having an energy band gap wider than that of the active layer. The thickness of the active layer in the groove is larger than the thickness of the active layer outside the groove and the shape of the active layer has the shape of the groove. The thickness of the active layer is largest in the bottom of the groove and gradually becomes smaller toward the edges of the groove. The semiconductor laser can output a laser beam having nearly a circular cross-section at a low threshold current and is easily fabricated.

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Okuda et al, "Highly Reliable InGaP/InGaAlP Visible Light Emitting Inner Stripe Laser With 667 nm Lasing Wavelength", IEEE Journal of Quantum Electronics, vol. 25, No. 6, Jun. 1989, pp. 1477-1482.
Horikawa et al, "Inner-Stripe AlGaAs/GaAs Laser Diode By Single-Step Molecular Beam Expitaxy", Electronics Letters, vol. 23, No. 5, Feb. 1987, pp. 209-210.
Yamamoto et al, "O 66 .mu.m Room-Temperature Operation Of InGaAlP DH Laser Diodes Grown By MBE", Electronics Letters, vol. 19, No. 5, Mar. 1983, pp. 163-165.
Mori et al, "Single Mode Laser With a V-Shaped Active Layer Grown By Metalorganic Chemical Vapor Deposition: A V-Shaped Double Heterostructure Laesr", Journal of Applied Physcis, vol. 52, No. 9, Sep. 1991, pp. 5429-5433.

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