Process of producing semiconductor devices by forming a silicon

Details Process of producing semiconductor devices by forming a silicon Process of producing semiconductor devices by forming a silicon

1980-12-23

1982-12-14

Smith, John D.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

156653, 156657, 427 39, 427 93, 427 94, 427 95, 430316, 430317, H01L 21318

Patent

active

043638686

ABSTRACT:
A selective oxidation process for producing a semiconductor device comprises the step of depositing a silicon oxynitride layer directly on a silicon substrate by a plasma chemical vapor deposition method. After a selective oxidation of the silicon substrate, the silicon oxynitride layer is removed.

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patent: 4289797 (1981-09-01), Akselrad
Morosanu et al., "Thin Film Preparation by Plasma and Low Pressure CVD in a Horizontal Reactor", Vacuum, vol. 31, No. 7, pp. 309-313, 1981.

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