Process of producing semiconductor device

Details Process of producing semiconductor device Process of producing semiconductor device

1974-10-01

1976-09-14

Powell, William A.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29583, 156 8, 156 17, 156 3, 357 56, H01L 21225

Patent

active

039805085

ABSTRACT:
An SiO.sub.2 film doped with an impurity is formed on at least one portion of a surface of a semiconductor wafer. The wafer is selectively etched after a protective film for selective etching is disposed into a predetermined pattern on the SiO.sub.2 film. The impurity included in the SiO.sub.2 film can be diffused into the wafer to form a PN junction in the latter. Then the wafer is selectively etched until that surface of the wafer to which the PN junction is exposed is bevelled.

REFERENCES:
patent: 2975080 (1961-03-01), Armstrong
patent: 3179860 (1965-04-01), Clark et al.
patent: 3575644 (1971-04-01), Huth
patent: 3669775 (1972-06-01), Porter
patent: 3713913 (1973-01-01), Wolfle et al.
patent: 3767485 (1973-10-01), Sahagun
patent: 3769109 (1973-10-01), MacRae
patent: 3825454 (1974-07-01), Kikuchi et al.
patent: 3842490 (1974-10-01), Seales

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