Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-11
2008-12-09
Pizarro, Marcos D. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S636000, C257SE21582
Reexamination Certificate
active
07462560
ABSTRACT:
A process of physical vapor depositing mirror layer with improved reflectivity is disclosed. A wafer is loaded into a PVD tool comprising a degas chamber, a Ti/TiN sputter deposition chamber, a cooling chamber, and an aluminum sputter deposition chamber. A wafer degas process is first performed within the degas chamber. The wafer is then transferred to the Ti/TiN sputter deposition chamber and deposition sputtering a layer of titanium onto the wafer. The wafer is transferred to the cooling chamber and gas cooling the wafer temperature down to 40-50° C. The wafer is then transferred to the aluminum sputter deposition chamber and deposition sputtering a layer of aluminum onto the wafer at 40-50° C. with a backside gas turned off. The deposited layer of aluminum over the wafer has a reflectivity of about 0.925 at wavelength of around 380 nm.
REFERENCES:
patent: 6107182 (2000-08-01), Asahina et al.
patent: 6204167 (2001-03-01), Taniguchi
patent: 6656528 (2003-12-01), Ouellet et al.
patent: 6673716 (2004-01-01), D'Couto et al.
patent: 6920195 (2005-07-01), Ohishi et al.
patent: 6969448 (2005-11-01), Lau
patent: 2001/0004534 (2001-06-01), Carter-Coman
patent: 2003/0228746 (2003-12-01), Lee et al.
patent: 2004/0135166 (2004-07-01), Yamada et al.
patent: 2004/0242007 (2004-12-01), Hahn et al.
patent: 2005/0089924 (2005-04-01), Ho et al.
patent: 2006/0145177 (2006-07-01), Hagimoto et al.
patent: 2002140911 (2002-05-01), None
patent: 2004266039 (2004-09-01), None
patent: 20020045484 (2002-06-01), None
Chang Chih-Sheng
Chiang Nien-Chung
Lin Chi-Rong
Tsai Huai-Hsuan
Tung Chun-Hsing
Anya Igwe U.
Hsu Winston
Pizarro Marcos D.
United Microelectronics Corp.
LandOfFree
Process of physical vapor depositing mirror layer with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process of physical vapor depositing mirror layer with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of physical vapor depositing mirror layer with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4049053