Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-18
2000-12-19
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438665, 438951, 438609, H01L 2144
Patent
active
061627259
ABSTRACT:
Transparent electrodes of a plasma display panel is patterned from a transparent conductive layer by using a lift-off technique; a photo-resist mask is roughened through exposure to oxygen plasma before the deposition of the transparent conductive layer, and the rough surface causes the photo-resist mask to be partially uncovered with the transparent conductive layer, thereby allowing photo-resist remover to rapidly penetrate into the boundary between the photo-resist mask and a glass substrate.
REFERENCES:
patent: 4642163 (1987-02-01), Greschner et al.
Chaudhuri Olik
NEC Corporation
Peralta Ginette
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