Process of patterning compound semiconductor film in halogen con

Details Process of patterning compound semiconductor film in halogen con Process of patterning compound semiconductor film in halogen con

1992-12-14

1995-06-06

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437133, 437936, H01L 21306

Patent

active

054219540

ABSTRACT:
A gallium arsenide film or an aluminum gallium arsenide film is patterned through a process sequence comprising the steps of: covering the gallium arsenide film with a mask layer of indium gallium phosphide, indium gallium arsenide or indium gallium arsenic phosphide, etching a part of the mask layer in a gaseous etchant containing chlorine gas under radiating an electron beam onto the part of the mask layer for forming an etching mask, and etching a part of the gallium arsenide in the gaseous etchant, wherein one of the composition and the thickness of the mask layer is regulated in such a manner that crystal defects due to lattice mis-match are restricted, thereby preventing the gallium arsenide film from undesirable large side etching.

REFERENCES:
patent: 4897361 (1990-01-01), Harriott et al.
patent: 4933299 (1990-06-01), Durose
patent: 4994140 (1991-02-01), Kenzo et al.
patent: 5106764 (1992-04-01), Harriott et al.
N. Hamao, Y. Sugimoto, M. Sugimoto and H. Yokoyama, "Reduction in Interfacial Recombination Velocity Using in-situ Processing in AlGaAs/GaAs Overgrown Heterointerfaces", Opto-Electronics Research Laboratories, NEC Corporation, 2 pages, (published Sep. 28, 1992).
S. Miya et al., "Pattern Formation of GaAs Using InAs/GaAs Selective Etching by C1.sub.2 Gas", Proceedings for Fifth Section Meeting of Applied Physics Society, p. 1228, 11a-H-9 (published on Oct. 9, 1991).
B. P. Vander Gaag et al., "Microfabrication Below 10 Nanometers", SPIE Proc., Int. Soc. of Opt. Eng., vol. 1284, Mar. 20-21, 1990, pp. 161-169.

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