Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2002-05-21
2002-12-24
Ho, Hoai (Department: 2818)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S106000, C438S108000, C438S109000, C438S110000, C257S723000, C257S686000, C257S774000
Reexamination Certificate
active
06498053
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention regards a structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material, a composite structure using the electric connection structure and a manufacturing process.
2. Description of the Related Art
In particular, the invention can be used for electrically connecting a first silicon wafer incorporating electronic components to a second silicon wafer incorporating a micromechanical structure and/or to the outside. The invention can likewise be used for electrically connecting the first wafer to a third body carried by the second wafer, as well as for connecting the first wafer to the outside when the first wafer is covered by a protection structure, and thus is not directly accessible. An example of a particular application is represented by a micro-electromechanical system including a first wafer incorporating a circuit for controlling the parameters defining the state of a micro-electromechanical structure (for example, the position of a microactuator); a second wafer incorporating the micro-electromechanical structure; and a third wafer forming a cap for protecting the micro-electromechanical structure.
Various techniques are known for mechanically connecting two semiconductor material bodies (see, for example, Martin A. Schmidt, “Wafer-to-Wafer Bonding for Microstructure Formation”, Proceedings of the IEEE, Vol. 86, No. 8, August 1998). However, such techniques do not enable two or three wafers to be electrically connected, in addition to be mechanically connected, or covered components of one of the wafers to be electrically accessed.
BRIEF SUMMARY OF THE INVENTION
An embodiment of the present invention provides a connection structure that enables semiconductor material bodies made on different substrates to be overlaid and to be connected mechanically and electrically together and to the outside.
According to embodiments of the present invention, an electric connection structure, a composite structure, and a process for manufacturing a composite structure are provided. The electric connection structure connects a first silicon body to conductive regions provided on the surface of a second silicon body arranged on the first body. The electric connection structure includes at least one plug region of silicon, which extends through the second body; at least one insulation region laterally surrounding the plug region; and at least one conductive electromechanical connection region arranged between the first body and the second body, and in electrical contact with the plug region and with conductive regions of the first body. To form the plug region, trenches are dug in a first wafer and are filled, at least partially, with insulating material. The plug region is fixed to a metal region provided on a second wafer, by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. The first wafer is thinned until the trenches and electrical connections are formed on the free face of the first wafer.
REFERENCES:
patent: 4239312 (1980-12-01), Myer et al.
patent: 4660066 (1987-04-01), Reid
patent: 4807021 (1989-02-01), Okumura
patent: 4939568 (1990-07-01), Kato et al.
patent: 5270261 (1993-12-01), Bertin et al.
patent: 5640049 (1997-06-01), Rostoker et al.
patent: 5756395 (1998-05-01), Rostoker et al.
patent: 5872025 (1999-02-01), Cronin et al.
patent: 6087719 (2000-07-01), Tsunashima
patent: 6118181 (2000-09-01), Merchant et al.
patent: 6228675 (2001-05-01), Ruby et al.
patent: 6265246 (2001-07-01), Ruby et al.
patent: 6362518 (2002-03-01), Yatsuda
patent: 6376280 (2002-04-01), Ruby et al.
patent: 0 317 084 (1989-05-01), None
Schmidt, M., “Wafer-to-Wafer Bonding for Microstructure Formation,”Proceedings of the IEEE, 86(8):1575-1585, Aug. 1998.
Aina Roberto
Bombonati Mauro
Ghironi Fabrizio
Mastromatteo Ubaldo
Ho Hoai
Huynh Andy
Iannucci Robert
Jorgenson Lisa K.
Seed IP Law Group PLLC
LandOfFree
Process of manufacturing a composite structure for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process of manufacturing a composite structure for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of manufacturing a composite structure for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2942267