Process of making thin film materials for high efficiency solar

Details Process of making thin film materials for high efficiency solar Process of making thin film materials for high efficiency solar

1982-07-07

1984-12-04

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156DIG102, C30B 2502

Patent

active

044862652

ABSTRACT:
Process of making thin film materials for high efficiency solar cells on low-cost silicon substrates. The process comprises forming a low-cost silicon substrate, forming a graded transition region on the substrate and epitaxially growing a thin gallium arsenide film on the graded transition region. The process further includes doping the thin gallium arsenide film and forming a junction therein. The graded transition region preferably is a zone refined mixture of silicon and germanium characterized by a higher percentage of germanium at the surface of the region than adjacent the substrate. The process also includes the formation of homojunctions in thin gallium arsenide films.
Solar cells made from the materials manufactured according to the process are characterized by a high conversion efficiency, improved stability and relatively low unit cost.

REFERENCES:
patent: 3615855 (1971-10-01), Smith
Chu et al., Jl. of Applied Physics v 48, No. 11, 11/77 pp. 4848-4849.
Vasilesvskaya et al., Thin Solid Films 55 (1978) 229-234.
Lau et al., Appl. Phys. Lett. 33 (3) 8/78 pp. 235-237.
Golecki et al., Thin Solid Films 57 (1) L13-L15 (1979).
Kasper et al., App. Phys. 8 pp. 199-205, 1975.

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