Process of making strain-free, carbon-doped epitaxial layers and

Details Process of making strain-free, carbon-doped epitaxial layers and Process of making strain-free, carbon-doped epitaxial layers and

1991-01-24

1992-05-26

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156606, 156DIG70, 437 81, 437 96, 437133, C30B 1900

Patent

active

051164558

ABSTRACT:
A process of making strain-free, heavily carbon-doped p-type epitaxial layers for use in high performance devices and at least one such device so made. The process essentially includes the epitaxial deposition of a strain-free, carbon-doped p-type layer in a GaAs HBT device to form the base layer thereof in a manner that includes the balancing of the strain of the crystal lattice structure caused by the carbon doping by co-doping the base layer with an isovalent and isoelectric dopant. The co-doping also improves device performance. It also effects alloy hardening, which inhibits further defect formation, improves mobility and carrier lifetime of the base layer and, by narrowing the energy gap, it improves ohmic contact formation.

REFERENCES:
patent: 4392297 (1983-07-01), Little
patent: 4486265 (1984-12-01), Little
patent: 4596208 (1986-06-01), Wolfson et al.
patent: 4617724 (1986-10-01), Yokoyama et al.
patent: 4741354 (1988-05-01), Demild, Jr.
"Electrical Properties of Indium Doped GaAs Layers Grown by MBE"; Missous et al., Journal of Crystal Growth 81 (1987), pp. 314-318.
M. L. Timmons, P. K. Chiang, S. V. Hattangady, "An Alternative Mg Precursor for P-Type Doping of OMVPE Grown Material", Journal of Crystal Growth 77(1986), pp. 37-41.
W. S. Hobson, S. J. Pearaton, A. S. Jordan, "Redistribution of Zn in GaAs-AlGaAs Heterojunction Bipolar Transistor Structures", App. Phys. Lett. 56 (13), Mar. 26, 1990, pp. 1251-1253.
P. M. Enquist, "P-Type Doping Limit of Carbon in Organometallic Vapor Phase Epitaxial Growth of GaAs Using Carbon Tetrachloride", App. Phys. Lett. 57(22), Nov. 26, 1990, pp. 2348-2350.
H. Ehrenreich, J. P. Hirth, "Mechanism for Disclocation Density Reduction in GaAs Crystals by Indium Addition", Appl. Phys. Lett. 46(7), Apr. 1, 1985, pp. 668-670.
G. M. Blom, J. M. Woodall, "Effect of ISO-Electronic Dopants on the Dislocation Density of GaAs", Journal of Electronic Materials, vol. 17, No. 5, 1988, pp. 391-396.
G. B. Stringfellow, R. Stall, W. Koschel, "Carbon in Molecular Beam Epitaxial GaAs", App. Phys. Lett 38(3), Feb. 1, 1981, pp. 156-157.
T. F. Kuech, M. A. Tischler, P. J. Wang, G. Scilla, R. Potemski, F. Cardone, "Controlled Carbon Doping of GaAs by Metalorganic Vapor Phase Epitaxy", Appl. Phys. Lett 53(14), Oct. 3, 1988, pp. 1317-1319.

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