Process of making solid state devices using silicon containing o

Details Process of making solid state devices using silicon containing o Process of making solid state devices using silicon containing o

1983-06-27

1985-02-19

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 17, 430 18, 430321, 430325, 430271, 430281, 430272, 430966, 430967, 427 431, 427 531, 156643, 1566591, G03C 500, G03C 524, H05K 300

Patent

active

045006288

ABSTRACT:
Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.

REFERENCES:
patent: 3782940 (1974-01-01), Ohto et al.
patent: 3809686 (1974-05-01), Chandross et al.
patent: 3899338 (1975-08-01), Lewis
patent: 4061829 (1977-12-01), Taylor
patent: 4232110 (1980-11-01), Taylor
patent: 4235958 (1980-11-01), Barrand et al.
patent: 4278753 (1981-07-01), Lewis et al.
patent: 4307178 (1981-12-01), Kaplan et al.
patent: 4329418 (1982-05-01), Khy et al.
patent: 4332879 (1982-06-01), Pastor
patent: 4347304 (1982-08-01), Sakurai et al.
patent: 4396704 (1983-08-01), Taylor
Taylor, G. N., "X-Ray Resist Materials", Solid State Technology, May 1980, pp. 73-80.
Pastor, A. C. et al., "Lithography . . . Photoresists", Thin Solid Films, vol. 67, 1980, pp. 9-12.
Kuwano, H., et al., "Dry Development . . . Gallium Ion Beam", Japanese Journal of Applied Physics, vol. 19, #10, 10/80, pp. L615-L617.
Taylor, G. N., et al., "Oxygen Plasma . . . Polymer Films", Polymer Eng. & Science, 1980, vol. 20, No. 16, pp. 1087-1092.
Taylor, G. N., "X-Ray Resist Trends", Solid State Technology, pp. 124-131, 6/1984.

Affiliated with

Also associated with

Rating

Process of making solid state devices using silicon containing o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of making solid state devices using silicon containing o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of making solid state devices using silicon containing o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-613512