Process of making semiconductor device and improved semiconducto

Details Process of making semiconductor device and improved semiconducto Process of making semiconductor device and improved semiconducto

1996-08-12

1999-05-18

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438758, 438770, 438906, H01L21/306

Patent

active

059045744

ABSTRACT:
A semiconductor device and a method for making the semiconductor device is provided. The semiconductor device has a silicon surface of a silicon substrate from which particles and metallic impurities are removed and on which a hydrophilic property is maintained to reduce contamination while the substrate is cleaned and conveyed. A first cleaning step cleans the silicon substrate by a first cleaning solution. At that time, a native oxide film is formed on the silicon surface. The silicon substrate is then rinsed by a first rinsing step using a first rinsing solution. The silicon substrate having the native oxide film is thereafter cleaned by a second cleaning solution containing hydrogen fluoride. In the second cleaning step, the surface layer of the native oxide film is removed. The silicon substrate is further subjected to a second rinsing step that rinses the silicon substrate that retains the second cleaning solution by a second rinsing solution. A time T1, in minutes, from the start of the second cleaning step to the start of the second rinsing step is:

REFERENCES:
patent: 5229334 (1993-07-01), Kato
patent: 5635053 (1997-06-01), Aoki et al.
Stanley Wolf, Silicon Processing for the VLSI Era, vol. 1, pp. 198, 516-517, 1986.

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