Process of lift off of material

Details Process of lift off of material Process of lift off of material

1983-12-29

1984-11-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29603, 156643, 156652, 156666, 204192EC, 204192E, 427131, 427132, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

044810717

ABSTRACT:
Process for lift-off fabrication of sputtered dielectric or nonmagnetic gap materials and thin-film heads for either a single-element thin-film head or side-by-side elements on a thin-film head. The lift-off process utilizes a copper coating that is removed by a twenty percent solution of ammonium persulfate with a pH in the range of seven to nine to assure complete removal of gap material from the back closure of the thin-film head without damage to the underlying permalloy. The process can also be utilized to obtain a multiple layer deposits on a single thin-film had by repeating the steps of the process. The process provides for a clean hole, no dielectric on the surface nor any attacking on the magnetic material.

REFERENCES:
patent: 4119483 (1978-10-01), Hubsch et al.
IBM Technical Disclosure Bulletin, vol. 18, No. 1, Jun. 1975, Thin Film and Thin-Film/Ferrite Hybrid Magnetic Heads, L. T. Romankiew et al., pp. 19-22.
IBM Technical Disclosure Bulletin, vol. 18, No. 1, Jun. 1975, High-Density Head, W. D. Kehr et al., pp. 27-28.

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