Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-06-06
2006-06-06
Zarneke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C427S337000
Reexamination Certificate
active
07056837
ABSTRACT:
A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.
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Cotte John M.
McCullough Kenneth John
Moreau Wayne Martin
Petrarca Kevin
Simons John P.
Morris, Esq. Daniel P.
Scully , Scott, Murphy & Presser, P.C.
Zarneke David A.
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