Process of growing polycrystalline silicon-germanium alloy havin

Details Process of growing polycrystalline silicon-germanium alloy havin Process of growing polycrystalline silicon-germanium alloy havin

1997-09-03

1999-03-09

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438479, 438488, 438935, 438507, 438508, 438967, 438980, H01L 21205, H01L 21336

Patent

active

058799702

ABSTRACT:
Polycrystalline silicon-germanium alloy is grown on a glass substrate through a chemical vapor deposition under the conditions where the substrate temperature ranges from 350 degrees to 450 degrees in centigrade, the ratio between gas flow rate of Si.sub.2 H.sub.6 and the gas flow rate of GeF.sub.4 ranges from 20:0.9 to 40:0.9 and the dilution gas is selected from the group consisting of helium, argon, nitrogen and hydrogen, and the composition ratio of silicon of the polycrystalline silicon-germanium is equal to or greater than 80 percent so that the carrier mobility is drastically improved.

REFERENCES:
patent: 5011759 (1991-04-01), Hitotsuyanagi et al.
patent: 5120394 (1992-06-01), Mukai
patent: 5194398 (1993-03-01), Miyachi et al.
patent: 5232868 (1993-08-01), Hayashi et al.
Shiota et al.; "Growth of High Quality Poly-SiGe on Glass Substrates"; Mat. Res. Soc. Symp. Proc. vol. 452 (Advances in Microcrystalline and Nanocrystalline Semiconductors-1996); Symposium held Dec. 2-6, 1996, Boston MA; 1997, pp. 1001-1006, 1997.
Tsai et al.; "Effects of Ge on Material and Electrical Properties of Polycrystalline Si1-xGex for TFT Applications"; Proceedings of the Second Symposium on Thin Film Transistor Technologies; The Electrochemical Society Proceedings 94-35, Symposium held on, 1995.

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