Process of forming metal silicide interconnects

Details Process of forming metal silicide interconnects Process of forming metal silicide interconnects

1998-02-23

2000-04-04

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438626, 438629, 438186, 438195, H01L 21337, H01L 214763

Patent

active

060460989

ABSTRACT:
A process for forming a metal suicide interconnect includes applying a layer of polysilicon over a semiconductor layer. A layer of amorphous silicon is formed over the layer of polysilicon followed by a layer of metal, such as titanium, over the layer of amorphous silicon. The layer of titanium is reacted with the layer of amorphous silicon to form a small grain C49 layer of titanium silicide. The layer of polysilicon and the layer of titanium silicide are etched to form a desired interconnect structure. The small grain C49 layer of titanium silicide is then converted to the C54 phase.

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