Process of forming inter-level connection without increase of co

Details Process of forming inter-level connection without increase of co Process of forming inter-level connection without increase of co

1996-04-16

1999-07-27

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438658, 438659, 438672, H01L 214763

Patent

active

059306750

ABSTRACT:
A natural oxide on an amorphous silicon exposed to a miniature contact hole is thermally decomposed in vacuum and an amorphous silicon is grown on the amorphous silicon without exposing to the atmosphere; the amorphous silicon is applied with heat so as to be epitaxially grown on a single crystal silicon beneath the amorphous silicon, thereby forming a conductive plug in the miniature contact hole.

REFERENCES:
patent: 4843034 (1989-06-01), Hetndon et al.
patent: 5418180 (1995-05-01), Brown

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