Process of forming contacts and vias having tapered sidewall

Details Process of forming contacts and vias having tapered sidewall Process of forming contacts and vias having tapered sidewall

1995-10-16

1996-10-22

Fourson, George

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437195, 437228, 437947, 437981, 437187, H01L 2128

Patent

active

055672701

ABSTRACT:
A process of forming contact holes having tapered sidewalls is accomplished by establishing sidewall spacers in the contact hole area. A photo-resist layer is formed on top of a semiconductor device having a substrate with doped regions, a polysilicon layer and a multi-layer insulating structure. The photo-resist layer has openings defining area slightly larger than the sizes of the actual contact holes. The multi-layer insulating structure is anisotropically eteched to remove one half of the thickness in the opening area and a void with vertical sidewall is formed in the insulating structure. After etching, the photo-resist layer is removed and a temporary insulating layer having the same composition as the top layer of the multi-layer insulating structure is deposited uniformly over the surface of the multi-layer insulating structure. The temporary insulating layer is etched and removed by anisotropically etching process. A part of the remaining temporary insulating layer in the opening area forms a sidewall spacer on the vertical sidewall of the void. The surface of the multi-layer insulating structure and the sidewall spacer is further anisotropically etched to expose the semiconductor substrate in the opening area and complete the formation of the contact hole with tapered sidewall. The process is also applicable to the formation of metal vias.

REFERENCES:
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 5180689 (1993-01-01), Liu et al.
patent: 5203957 (1993-04-01), Yoo et al.
patent: 5227014 (1993-07-01), Crotti et al.
patent: 5279990 (1994-01-01), Sun et al.
patent: 5294296 (1994-03-01), Yoon et al.
patent: 5444021 (1995-08-01), Chung et al.

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