Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-04-26
2011-04-26
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S260000, C438S257000, C438S263000, C438S264000, C438S197000, C257SE21210, C257SE21409, C257SE21400, C977S932000, C977S943000
Reexamination Certificate
active
07932189
ABSTRACT:
An electronic device can include a layer of discontinuous storage elements. A dielectric layer overlying the discontinuous storage elements can be substantially hydrogen-free. A process of forming the electronic device can include forming a layer including silicon over the discontinuous storage elements. In one embodiment, the process includes oxidizing at least substantially all of the layer. In another embodiment, the process includes forming the layer using a substantially hydrogen-free silicon precursor material and oxidizing at least substantially all of the layer.
REFERENCES:
patent: 4814291 (1989-03-01), Kim et al.
patent: 4830890 (1989-05-01), Kanai
patent: 5691939 (1997-11-01), Chang et al.
patent: 6090666 (2000-07-01), Ueda et al.
patent: 6218315 (2001-04-01), Ballamine et al.
patent: 6297095 (2001-10-01), Muralidhar et al.
patent: 6451641 (2002-09-01), Halliyal et al.
patent: 6465373 (2002-10-01), Zheng et al.
patent: 6816414 (2004-11-01), Prinz
patent: 2002/0076850 (2002-06-01), Sadd et al.
patent: 2003/0211680 (2003-11-01), Arghavani et al.
DiMaria, et al.; “Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon”; pp. 3367-3384; J. Appl. Phys. 73 (7); Apr. 1, 1993.
Wolf, Stanley et al., “Silicon Processing for the VLSI Era, Volume 1: Process Technology,” Lattice Press, CA, 1986, p. 217.
Liu Chun-Li
Merchant Tushar P.
Muralidhar Ramachandran
Orlowski Marius K.
Rao Rajesh A.
Freescale Semiconductor Inc.
Sefer A.
Woldegeorgis Ermias
LandOfFree
Process of forming an electronic device including a layer of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process of forming an electronic device including a layer of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of forming an electronic device including a layer of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2738328