Process of forming a semiconductor device

Details Process of forming a semiconductor device Process of forming a semiconductor device

1999-04-12

2000-12-26

Diamond, Alan

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

20419211, 20419225, 20419212, 2041921, 20419217, 20419216, 20429812, 20429811, 20429806, 20429802, 427569, 427580, 427123, 427124, 4271261, 427526, 427527, 427531, 438758, 438584, 438579, C23C 1434, C23C 1448

Patent

active

061655678

ABSTRACT:
A film is formed over a substrate using a physical vapor deposition method. When using ionized metal plasma physical vapor deposition, the deposition chamber configuration or operating parameters are adjusted to achieve the desired film characteristics. If the film is to be substantially uniform in thickness across a substrate, the deposition species density is made higher at locations away from the center of the substrate.

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