Process of forming a refractory metal thin film

Details Process of forming a refractory metal thin film Process of forming a refractory metal thin film

1998-02-17

2000-11-07

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427534, 4272554, 427250, 427309, 427 99, 4273722, H05H 124, C23C 1608

Patent

active

061433772

ABSTRACT:
A process for forming a refractory metal thin film on a substrate by subjecting a gaseous mixture containing a halide of a refractory metal and the hydrogen gas to a plasma chemical vapor deposition, comprising the step of adjusting a mixing ratio of the halide of the refractory metal to the hydrogen gas to a relatively small value at an initial stage of the process and, subsequent to the initial stage of the process, adjusting the mixing ratio of the halide of the refractory metal to the hydrogen gas to a relatively large value.

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G.S. Higashi et al, Appl. Phys. lett. 56(7) p. 656, Feb. 1990.
A. Kishimoto, Jpn. J. Appl. Phys. 29(10) p. 2273, Oct. 1990.

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