Process of forming a dual damascene structure in a single photor

Details Process of forming a dual damascene structure in a single photor Process of forming a dual damascene structure in a single photor

1997-03-28

1999-05-25

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430312, 430394, 430314, G03F 700

Patent

active

059069112

ABSTRACT:
The present invention is embodied in a process for creating a dual damascene structure. The process includes the steps of forming a photoresist film on a substrate, pattern exposing the photoresist film to form a first pattern in the photoresist film, and forming an etch resistant layer in the first pattern. The resistant layer is resistant to a further pattern exposure and etching. The photoresist film is pattern exposed a second time to form a second pattern in the photoresist film. The sections of the photoresist film corresponding to the second pattern are removed and the substrate is etched to form the second pattern in the substrate. The resistant layer is removed and the substrate is etched to form the first pattern in the substrate. Finally, the remaining photoresist film is removed from the substrate.

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C.A. Spence, S.A. MacDonald and H. Schlosser, "Silyation of Poly (t-BOC) Styrene Resists: Performance and Mechanisms", SPIE vol. 1262 Advances in Resist Technology and Processing VII (1990), pp. 344-357.

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