Process of fabricating silicon oxide and gettering films on poly

Details Process of fabricating silicon oxide and gettering films on poly Process of fabricating silicon oxide and gettering films on poly

1986-03-20

1989-05-09

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

437 12, 437 52, 357 59, 357 51, H01L 21322

Patent

active

048286290

ABSTRACT:
Multi-layer film including a silicon oxide film formed by the CVD method and a film having a gettering function is used as a layer insulation film in a semiconductor device having a resistance constituted by polycrystalline silicon, so that an impurity is not introduced into a resistance element formed in the (intrinsic) polycrystalline silicon, which is thereby stabilized, resulting in an improved characteristic of the semiconductor device. A third layer, of Spin on Glass, can be formed on the film having a gettering function so as to improve the flatness of the layer insulation film.

REFERENCES:
patent: 4123564 (1978-10-01), Ajima et al.
patent: 4196232 (1980-04-01), Schnable et al.
patent: 4260425 (1981-04-01), Ulrich et al.
patent: 4326213 (1982-04-01), Shirai et al.
patent: 4563241 (1986-01-01), Tanaka et al.
patent: 4620986 (1986-11-01), Yau et al.
Ghandhi, V.L.S.I. Fabrication Principles, John Wiley & Sons, Inc. (1983), pp. 422, 423.

Affiliated with

Also associated with

Rating

Process of fabricating silicon oxide and gettering films on poly does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of fabricating silicon oxide and gettering films on poly, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of fabricating silicon oxide and gettering films on poly will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-87517