Process of fabricating semiconductor integrated circuit having c

Details Process of fabricating semiconductor integrated circuit having c Process of fabricating semiconductor integrated circuit having c

1992-05-26

1994-04-19

Fourson, George

Fishing, trapping, and vermin destroying

437 46, 437 47, 437 57, 437 69, 437918, H01C 21266

Patent

active

053045025

ABSTRACT:
In a process according to the present invention, a polysilicon gate electrode and a high resistive polysilicon strip are simultaneously patterned on an active area and on a thick field oxide film, respectively, and the gate electrode and the polysilicon strip are covered with thin silicon oxide films, respectively, then impurities being doped in the active area to form source and drain regions, then the thin silicon oxide film being removed from the gate electrode, then a refractory metal silicide film being formed on the gate electrode, however, the formation of the refractory metal silicide film does not affect the polysilicon strip, because the thin silicon oxide film is left thereon, which results in maintaining the polysilicon strip in the high resistivity and, accordingly, in that the polysilicon strip provides a resistor with a large resistance but occupies a small amount of area.

REFERENCES:
patent: 3865649 (1975-02-01), Beasom
patent: 4057894 (1977-11-01), Khajezadeh et al.
patent: 4208781 (1980-06-01), Rao et al.
patent: 4212083 (1980-07-01), Rao
patent: 4246692 (1981-01-01), Rao
patent: 4256515 (1981-03-01), Miles et al.
patent: 4291328 (1981-09-01), Lien et al.
patent: 4367580 (1983-01-01), Guterman
patent: 4370798 (1983-02-01), Lien et al.
patent: 4391650 (1983-07-01), Pfeifer et al.
patent: 4408385 (1983-10-01), Rao et al.
patent: 4416049 (1983-11-01), McElroy
patent: 4455737 (1984-06-01), Godejahn, Jr.
patent: 4560583 (1985-12-01), Moksvold
patent: 4599789 (1986-07-01), Gasner
patent: 4734382 (1988-03-01), Krishna
patent: 4759836 (1988-07-01), Hill et al.
patent: 4871688 (1989-10-01), Lowrey
"Titanium Disilicide Self-Aligned Source/Drain+Gate Technology", Lau et al, IEDM 82 1982.
"Design and Characteristics of a Lightly Doped Drain (LDD) Device Fabricated with Self-Aligned Titanium Disilicide", Lai et al, IEEE Transactions on Electron Devices, vol. ED-33, No. 3, Mar. 1986.

Affiliated with

Also associated with

Rating

Process of fabricating semiconductor integrated circuit having c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of fabricating semiconductor integrated circuit having c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of fabricating semiconductor integrated circuit having c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-19438